digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 ga200-ga201a silicon controlled rectifier nanosecond switching available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. maximum ratings ratings symbol ga200 ga200a ga201 ga201a GB200 GB200a gb201 gb201a repetitive peak off state voltage v drm 60v 100v 60v 100v repetitive peak on state current i trm up to 100a dc on state current 70c ambient 70c case i t 200ma 400ma - 6a peak gate current i gm 250ma 250ma average gate current i g(av) 25ma 50ma reverse gate current i gr 3ma 3ma reverse gate voltage v gr 5v 5v thermal resistance r ? ca 300c/w storage temperature range t stg -65 to 200c operating temperature range t j -65 to 150c electrical characteristics (@ 25c unless otherwise noted) test symbol min. typ. max. units test conditions delay time t d - - 20 10 30 - ns i g = 20ma, i t = 1a i g = 30ma, i t = 1a rise time (ga200, ga200a, GB200, GB200a) t r - - 15 25 25 - ns v d = 60v, i t = 1a(1) v d = 60v, i t = 30a(1) rise time (ga201, ga201a, gb201, gb201a) t r - - 10 20 20 - ns v d = 100v, i t = 1a(1) v d = 100v, i t = 30a(1) gate trigger on pulse width t pg(on) - 0.02 0.05 s i g = 10ma, i t = 1a circuit commutated turn-off time (ga200, ga201, GB200, gb201) (ga200a, ga201a, GB200a, gb201a) t q - - 0.8 0.3 2.0 0.5 s i t = 1a, i r = 1a, r gk = 1k - 0.01 0.1 a v drm = rating, r gk = 1k off-state current i drm - 20 100 a v drm = rating, r gk = 1k, 150 c reverse current i rrm - 1.0 10 ma v rrm = 30v, r gk = 1k(2) reverse gate current i gr - 0.01 0.1 ma v grm = 5v gate trigger current i gt - 10 200 a v d = 5v, r gs = 10k 0.4 0.6 0.75 v v d = 5v, r gs = 100 ? , t = 25c gate trigger voltage v gt 0.10 0.20 - v t = 150c on-state voltage v t - 1.1 1.5 v i t = 2a 0.3 2.0 5.0 ma v d = 5v, r gk = 1k, t = 25c holding current i h 0.05 0.2 - ma t = 150c off-state voltage - critical rate of rise dv/dt 20 40 - v/s v d = 30v, r gk = 1k note 1: i g = 10ma, pulse test: duty cycle < 1%. note 2: pulse test intended to guarantee reverse anode voltage capability for pulse co mmutation. device should not be operated in the reverse blocking mode on a continuous basis. sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20120117
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 ga200-ga201a silicon controlled rectifier nanosecond switching mechanical characteristics case to-18 marking alpha-numeric pin out see below to-18 inches millimeters min max min max a 0.209 0.230 5.310 5.840 b 0.178 0.195 4.520 4.950 c 0.170 0.210 4.320 5.330 d 0.016 0.021 0.406 0.533 e - 0.030 - 0.762 f 0.016 0.019 0.406 0.483 g 0.100 bsc 2.540 bsc h 0.036 0.046 0.914 1.170 j 0.028 0.048 0.711 1.220 k 0.500 - 12.700 - l 0.250 - 6.350 - m 45c bsc 45 bsc n 0.050 bsc 1.270 bsc p - 0.050 - 1.270 sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20120117
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 ga200-ga201a silicon controlled rectifier nanosecond switching switching speed (typical) ga/GB200 series peak current vs. pulse width (ga200 series) notes: 1. v d = rated v drm 1. data based on on-state voltage graph at 2. t a = 25c t j = 150c. blocking voltage may be applied 3. i g = 20ma immediately afte r termination of current pulse 4. t d = 20ns, typically for all types independent of anode current 2. t a = 75c on-state current vs. voltage surge rating maximum (ga/GB200 series) (ga/GB200 series) peak current vs. pulse width peak current vs. pulse width (GB200 series) (GB200 series) notes: 1. data based on on-state voltage graph at 1. data based on on-state voltage graph at t j = 150c. t j = 150c. blocking voltage may be applied blocking voltage may be applied immediately after immediately after termination of current pulse. te rmination of current pulse 2. t c = 75c 2. t a = 75c sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20120117
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 ga200-ga201a silicon controlled rectifier nanosecond switching on-state current vs. voltage surge rating maximum (ga/GB200 series) (ga/GB200 series) notes: 1.blocking voltage may not be applied for 0.001 seconds after termination of surge pulse as junction temperature will exceed 150. 2. t c = 75c sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20120117
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